基于氧/氮原子吸收的高焓环境中C/SiC近壁面流动特性研究

Investigation of near-wall flow characteristics over C/SiC in high-enthalpy environments using O/N atomic absorption spectroscopy

  • 摘要: 高焓来流与防热材料在气固界面处的催化复合、氧化和氮化等双向耦合作用是影响气动热环境的重要因素,在线测量高焓环境下材料近壁面气流温度与离解原子数密度,对理解该耦合过程具有重要意义。本研究基于激光吸收光谱技术,同时采用氧原子(O)777.19 nm与氮原子(N)868.03 nm吸收谱线,量化分析了C/SiC复合材料近壁面流场不同空间处平动温度及O、N原子数密度。测量光路选取两处,位置1激光光束中心紧贴材料表面,位置2光束中心距材料表面约2 mm,同步对位置1处的烧蚀产物(CN与Si)的辐射光谱进行采集。该高焓气动热环境利用1 MW高频感应等离子体风洞构建,综合考虑C/SiC表面温度与烧蚀后表面特性,设计了2组对比性实验状态,状态1总焓43.2 MJ/kg,热流密度3.7 MW/m2,状态2总焓37.5 MJ/kg,热流密度3.1 MW/m2,模型加热时间均为120 s。吸收光谱结果显示:受激波压缩影响,相比远离壁面处的位置2,近壁面位置1的平动温度低,而数密度更高。两组状态位置1处平动温度与O、N原子数密度均呈明显下降趋势,与此同时,位置1处显著的CN辐射表明有明显氮化反应,电镜及能谱分析证明材料表面已覆盖SiO2层。两组状态对比结果显示,状态1下近壁面O、N原子数密度下降幅度更大;CN与Si辐射明显更强;表面氧元素含量更低,氧化与氮化反应竞争过程更为剧烈。本研究证明通过对近壁面流动组分数密度、辐射光谱等参数的时空分辨测量,有助于深入理解气固界面处的耦合过程。

     

    Abstract: The catalytic recombination, oxidation, and nitridation coupling processes occurring at the gas-solid interface between the high-enthalpy flow and thermal protection materials are key factors influencing the aerodynamic thermal environment. Real-time measurement of the near-wall gas temperature and atomic number density under high-enthalpy conditions is essential for understanding these coupling mechanisms. In this study, laser absorption spectroscopy was employed using the oxygen atomic line at 777.19 nm and the nitrogen atomic line at 868.03 nm to quantitatively determine the translational temperature and species number density at different spatial positions near the surface of a C/SiC composite material. Two optical paths were selected: at position 1, the laser beam center was close to the material surface; at position 2, it was approximately 2 mm away. Simultaneously, the emission spectra of ablation products (CN and Si) were collected at position 1. The high-enthalpy aerodynamic thermal environment was generated using a 1 MW high-frequency inductively coupled plasma wind tunnel. Considering the surface temperature and post-ablation morphology of the C/SiC material, two experimental conditions with distinct surface oxidation characteristics were designed. Condition 1 featured a total enthalpy of 43.2 MJ/kg and a heat flux of 3.7 MW/m2, while condition 2 had 37.5 MJ/kg and 3.1 MW/m2, respectively. The heating duration for both conditions was 120 s. The laser absorption spectroscopy results indicate that, due to shock wave compression effects, position 1 near the wall exhibits lower translational temperature but higher number density compared to position 2 farther from the wall. Both conditions show significant decreases in translational temperature and O/N atom number density at position 1. Concurrently, the prominent CN radiation observed at Position 1 indicates substantial nitridation reactions. Scanning electron microscopy and energy dispersive spectroscopy analyses confirm that the material surface is covered with an SiO2 layer. Relative to condition 2, condition 1, characterized by higher enthalpy and heat flux, exhibited a more pronounced reduction in the near-wall number densities of both O and N atoms. This observation, in conjunction with stronger radiative intensity of CN and Si, as well as a reduced surface oxygen concentration, collectively implies that the surface oxide layer is more prone to volatilization or consumption, and the competitive process between oxidation and nitridation reactions is more intense under State 1. This research demonstrates that spatiotemporally resolved measurements of key parameters, such as the number densities of near-wall species and their radiative spectra, provide critical insights into the complex coupling processes at the gas-solid interface.

     

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