耐高温动态压力传感器与实验分析研究

热合曼·艾比布力; 王鸿雁; 薛方正; 黄琳雅; 皇咪咪; 于明智; 赵立波

doi:10.11729/syltlx20170028

耐高温动态压力传感器与实验分析研究

doi: 10.11729/syltlx20170028

1.
新疆交通职业技术学院汽车与机电工程学院, 乌鲁木齐 831401
2.
陕西省计量科学研究院, 西安 710065
3.
西北核技术研究所, 西安 710024
4.
西安交通大学机械制造系统工程国家重点实验室, 微纳制造与测试技术国际合作联合实验室, 苏州纳米科技协同创新中心, 西安 710049

基金项目:

国家自然科学基金 51375378

国家重点研发计划 2016YFB1200103-04

详细信息

作者简介:
热合曼·艾比布力 (1963-), 男, 新疆乌鲁木齐人, 讲师。研究方向:汽车运用工程。通信地址:新疆交通职业技术学院汽车与机电工程学院 (831401)。E-mail:rahman1963@163.com

通讯作者:
王鸿雁, E-mail: xinnya@126.com

中图分类号: TP212
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- 文章访问数: 287
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- 被引次数: 0
出版历程
- 收稿日期: 2016-12-20
- 修回日期: 2017-02-25
- 刊出日期: 2017-04-25

High temperature dynamic pressure sensor and experimental analysis

1.
School of Automotive, Mechanical and Electrical Engineering, Xinjiang Vocational & Technical College of Communications, Urumqi 831401, China
2.
Shaanxi Institute of Metrology Science, Xi'an 710065, China
3.
Northwest Institute of Nuclear Technology, Xi'an 710024, China
4.
State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Collaborative Innovation Center of Suzhou Nano Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China

摘要

摘要: 采用微机械电子系统（Micro Electro-Mechanical Systems，MEMS）和硅隔离（Silicon on Insulator，SOI）技术制作出了量程为25MPa的倒杯式耐高温压阻力敏芯片，敏感电阻条与硅基底之间采用二氧化硅隔离，解决了在大于120℃高温下力敏芯片工作稳定性和可靠性的难题。设计了齐平式机械封装结构，避免了管腔效应影响，提高了传感器的动态响应频率。对研制出的耐高温动态压力传感器进行了静态性能和动态性能的标定实验，静态实验温度为250℃，得到了传感器基本性能参数，分析了传感器的不确定度，得出该传感器的基本误差为±0.114%FS（Full Scale，全量程），不确定度为0.01794mV，计算得到了传感器的热零点漂移和热灵敏度漂移指标，由动态性能实验得到传感器的响应频率为555.6kHz，实验表明所研制的MEMS压力传感器在高温下具有良好的精度和固有频率。
- MEMS /
- SOI倒杯式力敏芯片 /
- 齐平式 /
- 高频响 /
- 不确定度
Abstract: The inverted cup-type high-temperature piezoresistive pressure sensitive chip with the range of 25MPa was developed by the Micro Electro-Mechanical Systems (MEMS) and Silicon on Insulator (SOI) technology. The sensitive piezoresistors are isolated from the silicon substrate by the silicon dioxide, and thus the stability and reliability problems of the pressure sensitive chip are solved at high temperatures beyond 120℃. The flush-type mechanical packaging structure was designed to avoid the channeling effect and improve the dynamic response frequency of the sensor. For the fabricated high temperature dynamic pressure sensor, the static and dynamic performance experiments were carried out to obtain the sensor's fundamental performance and analyze its uncertainty at the static experimental temperature of 250℃. The results show that the sensor accuracy is ±0.114%FS and the uncertainty is 0.017 94mV. The thermal zero drift and thermal sensitivity drift were calculated. The dynamic response frequency was calculated as 555.6 kHz through dynamic performance experiment. Therefore, the developed MEMS pressure sensor has fine accuracy and high natural frequency at high temperatures.
- MEMS /
- SOI inverted cup-type sensitive chip /
- flush-type /
- high frequency /
- uncertainty

HTML全文

图 1 力敏芯片版图结构示意图

Figure 1. Schematic of pressure sensitive chip

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图 2 惠斯通全桥测量电路

Figure 2. Wheatstone full bridge detection circuit

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图 3 力敏芯片主要制作流程

Figure 3. Production process of pressure sensitive chip

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图 4 力敏芯片的截面和表面形貌

Figure 4. Cross section and surface topography of the pressure sensitive chip

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图 5 传感器结构示意图

Figure 5. Mechanical schematic of the sensor structure

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图 6 传感器实物 (不含外壳)

Figure 6. Sensor photo (without shell)

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图 7 静态性能输入输出曲线

Figure 7. Input-output fitting curve of static performance

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图 8 零点漂移曲线

Figure 8. Zero drift curve

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图 9 动态响应曲线

Figure 9. Dynamic response curves

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表 1 传感器标定数据

Table 1. Calibration data of sensor

压力/MPa	输出信号/mV
	第1次		第2次		第3次		平均值
	正行程	反行程	正行程	反行程	正行程	反行程	正行程	反行程
0	0.58	0.59	0.59	0.58	0.59	0.58	0.587	0.583
5	13.45	13.43	13.44	13.44	13.43	13.45	13.440	13.440
10	26.17	26.15	26.16	26.15	26.15	26.15	26.160	26.150
15	38.92	38.92	38.93	38.93	38.92	38.92	38.923	38.923
20	51.67	51.65	51.67	51.65	51.66	51.67	51.667	51.657
25	64.45	64.46	64.45	64.47	64.46	64.46	64.453	64.463

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